21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode

Basit Öğe Kaydı
dc.contributor.authorCicek, Osman
dc.contributor.authorArslan, Engin
dc.contributor.authorAltindal, Semsettin
dc.contributor.authorBadali, Yosef
dc.contributor.authorOzbay, Ekmel
dc.date.accessioned2023-01-23T12:01:06Z
dc.date.available2023-01-23T12:01:06Z
dc.date.issued2022en_US
dc.departmentFakülteler, Mühendislik Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.description.abstractSensitivity (S) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm)- Au(100 nm)/Ga2O3/p-Si vertical MOS type diode, using the measured capacitance–voltage (Cm–V) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.en_US
dc.identifier.doi10.1109/JSEN.2022.3219553en_US
dc.identifier.scopus2-s2.0-85141580928en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://hdl.handle.net/11467/6153
dc.identifier.urihttps://doi.org/10.1109/JSEN.2022.3219553
dc.identifier.wosWOS:000928140300009en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation.ispartofIEEE Sensors Journalen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.subjectNovel drive mode, sensitivity, temperature sensing, vertical metal-oxide-semiconductor (MOS) type diode.en_US
dc.title21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Modeen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
Ä°sim:
21.2_mV_K_High-Performance_Ni50_nm-Au100_nm_Ga2O3_p-Si_Vertical_MOS_Type_Diode_and_the_Temperature_Sensing_Characteristics_With_a_Novel_Drive_Mode.pdf
Boyut:
2.66 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Ä°ndir
Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
Ä°sim:
license.txt
Boyut:
1.56 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
Ä°ndir

Koleksiyon

Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu