21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode
Yükleniyor...
Tarih
2022
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
IEEE
Erişim Hakkı
info:eu-repo/semantics/embargoedAccess
Özet
Sensitivity (S) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm)- Au(100 nm)/Ga2O3/p-Si vertical MOS type diode, using the measured capacitance–voltage (Cm–V) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.
Açıklama
Anahtar Kelimeler
Novel drive mode, sensitivity, temperature sensing, vertical metal-oxide-semiconductor (MOS) type diode.
Kaynak
IEEE Sensors Journal
WoS Q Değeri
Q1
Scopus Q Değeri
N/A
