A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors

Basit Öğe Kaydı
dc.contributor.authorÇiçek, Osman
dc.contributor.authorBadali, Yosef
dc.date.accessioned2024-04-01T11:55:24Z
dc.date.available2024-04-01T11:55:24Z
dc.date.issued2024en_US
dc.departmentFakülteler, Mühendislik Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.description.abstractGallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) are regarded as fundamental semiconductor devices for future power electronic applications. Consequently, researchers have directed their efforts toward enhancing critical parameters such as the breakdown voltage (Vbr), cut-off frequency, and operating temperature. Therefore, this review article explores research endeavors concerning the enhancement of Vbr in GaN-based HEMTs. The objective is to gain insights into the key factors influencing Vbr values and to identify the constraints that govern the optimal performance of HEMTs in power devices. Additionally, this review provides an in-depth examination of select studies that introduce novel techniques for improving Vbr values.en_US
dc.identifier.doi10.1109/TDMR.2024.3379745en_US
dc.identifier.scopus2-s2.0-85188669790en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://hdl.handle.net/11467/7218
dc.identifier.urihttps://doi.org/10.1109/TDMR.2024.3379745
dc.identifier.wosWOS:001253145400015en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.ispartofIEEE Transactions on Device and Materials Reliabilityen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.subjectGaN, HEMTs, Wide-bandgap, Negative-Bias Temperature Instability, Field-Plated Structure, Passivation Layer, Breakdown Voltage Enhancementen_US
dc.titleA Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistorsen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
A_Review_Breakdown_Voltage_Enhancement_of_GaN_Semiconductors_Based_High_Electron_Mobility_Transistors.pdf
Boyut:
1.16 MB
Biçim:
Adobe Portable Document Format
Açıklama:
İndir
Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.56 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu