A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors
Yükleniyor...
Tarih
2024
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Institute of Electrical and Electronics Engineers Inc.
Erişim Hakkı
info:eu-repo/semantics/embargoedAccess
Özet
Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) are regarded as fundamental semiconductor devices for future power electronic applications. Consequently, researchers have directed their efforts toward enhancing critical parameters such as the breakdown voltage (Vbr), cut-off frequency, and operating temperature. Therefore, this review article explores research endeavors concerning the enhancement of Vbr in GaN-based HEMTs. The objective is to gain insights into the key factors influencing Vbr values and to identify the constraints that govern the optimal performance of HEMTs in power devices. Additionally, this review provides an in-depth examination of select studies that introduce novel techniques for improving Vbr values.
Açıklama
Anahtar Kelimeler
GaN, HEMTs, Wide-bandgap, Negative-Bias Temperature Instability, Field-Plated Structure, Passivation Layer, Breakdown Voltage Enhancement
Kaynak
IEEE Transactions on Device and Materials Reliability
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
