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Öğe 21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode(IEEE, 2022) Cicek, Osman; Arslan, Engin; Altindal, Semsettin; Badali, Yosef; Ozbay, EkmelSensitivity (S) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm)- Au(100 nm)/Ga2O3/p-Si vertical MOS type diode, using the measured capacitance–voltage (Cm–V) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.Öğe Analysis of a spiral-formed solar air heating system with ceria nanoparticles-enhanced absorber coating(Elsevier Ltd, 2023) Khanlari, Ataollah; Badali, Yosef; Tuncer, Azim DoğuşSolar air heating systems are extensively applied in different applications in order to provide hot air using clean energy. In this study, a spiral type solar collector has been proposed, numerically simulated and manufactured. The main aim of this work is investigating the overall performance of a solar collector with spiral type absorber. In the first stage of this work, CFD approach has been used for simulating unbaffled and baffled spiral solar collector. Numerical findings exhibited better thermal performance of the baffled spiral collector. Therefore, in the following step of this survey, baffled spiral collector has been fabricated and experimentally analyzed at different conditions. In addition, ceria nanoparticles have been used in coating process of spiral-formed absorber plate of the system to upgrade the thermal efficiency. Mean thermal efficiency for spiral collector with and without nano-coating was obtained between 46.15 and 67.39%. Mean efficiency enhancement by using ceria nanoparticle coating in the tests made at 0.009 and 0.014 kg/s are 16.79% and 11.05%, respectively. Also, average exergy efficiency of spiral collector was achieved between 10.28 and 14.46%. Average sustainability index of spiral collector was gained in the range of 1.1151–1.1698. The overall findings of this study indicated successful utilization of the developed spiral type solar collector. Moreover, using ceria nanoparticle coating has significant positive effects on improving thermal efficiency of spiral collector. It can be concluded that the developed spiral type solar collector could be used in building integrated applications for providing fresh and heated air.Öğe Application of carbon-based nanomaterials in solar-thermal systems: An updated review(Pergamon-Elsevier Science Ltd, 2024) Tuncer, Azim Doğuş; Badali, Yosef; Khanlari, AtaollahIncreasing the world population makes it necessary to look for alternative and sustainable energy resources to meet the rising energy demand. In recent years, the utilization of different renewable energies has been accelerated because of the negative effects of fossil fuels and their limited resources. Among different solar energy technologies, solar liquid and air collectors are extensively utilized for providing heated water and air. Rapid development in science and technology makes it possible to improve the performance of solar collectors. Producing nanomaterials and using the obtained nano-sized particles for improving the thermophysical specifications of the working fluid or coating material can be considered for performance improvement. In the present study, applications of carbon-based nanomaterials (CBNMs) in various solar thermal systems have been reviewed comprehensively. In other words, the effects of utilizing carbon-based nanomaterials as promising material on the overall performance have been investigated. Preparation techniques and thermophysical specifications of carbon-based nanomaterials have been explained in detail. Also, utilization of carbon-based nanomaterials in seven widely utilized solar-thermal technologies and their impacts on the thermal behavior of the tested system have been concluded. This review gives a general perspective about applicability of carbon-based nanomaterials for performance enhancement in various solar-thermal systems.Öğe The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface(Elsevier Science Sa, 2023) Ulusoy, Murat; Badali, Yosef; Pirgholi-Givi, Gholamreza; Azizian-Kalandaragh, Yashar; Altindal, SemsettinThe electrical behaviors of the Schottky structures with a ruthenium dioxide (RuO2) doped-polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to 5 MHz) and voltages. The interface was obtained by dispersing RuO2 nanopowder as colloidal particles into the PVC organic polymer using the ultrasonic irradiation method. The capacitance/conductance and surface state intensity (Nss) effects of this interface on the structure have been widely discussed. Remarkable increases in capacitance (C) and conductance (G/.) values were found, especially in the depletion zone. The series resistance of the structure (Rs) value decreases strongly with increasing frequency for + 3.5 V, down to a value of approximately 48.43 O at 5 MHz. Furthermore, the effect of the Rs is seen in the Cc and Gc/. curves in the weak and strong accumulation regions. While the maximum value of the Nss is 1.42 x 10(13) eV 1.cm(-2) at 0.478 eV, its minimum value is 1.23 x 1013 eV 1.cm (-) at 0.540 eV. The relaxation time (t) values change from 2.40 x 10(-5) to 2.03 x 10(-4) s in exponentially increasing values. It can be stated that there is an inverse relationship between the t and distribution of the Nss values. These distributions vary depending on the applied voltage and frequency.Öğe Characterization of the electrical properties of MPS schottky structures incorporating Fe doped polyvinyl chloride (PVC)(Institute of Physics, 2024) Badali, YosefThis paper explores the effects of the organic interfacial layer on the electrophysical characteristics of Schottky barrier diodes (SBDs). Three types of SBDs were fabricated: Au-Si (referred to as MS), Au/PVC/Si (referred to as MPS1), and Au-/PVC:Fe/Si (referred to as MPS2). Fe nanopowders were subjected to analysis using XRD, SEM, and EDX techniques to investigate their structural and optical characteristics. To investigate the conduction mechanisms of these diodes, I-V characteristics were examined using thermionic-emission (TE), Cheung, and Norde functions. The surface-state density (N ss ) distribution of energy was determined by analyzing the current-voltage (IF-VF) curve under forward bias conditions. This analysis considered the voltage-dependent barrier height (BH) and ideality factor (n(V)). The results demonstrated that the polymeric interlayer without Fe nanoparticles reduced N ss by a factor of 7, while the presence of Fe nanoparticles led to a two-order magnitude decrease, resulting in improved efficiency in comparison with MS structures. The obtained results indicated that including a polymeric layer in MPS structure enhanced their electrophysical features compared to MS diodes, and significantly increased rectification by 15-45 times. In summary, the existence of an organic interfacial layer significantly altered the conduction mechanisms and electrophysical characteristics of MPS diodes. It was found that the addition of Fe nanoparticles in the interlayer resulted in substantial improvements in N ss , efficiency, rectification, and conduction characteristics compared to MS diodes.Öğe Electric and dielectric responses of Au/n-Si structure by Mn doped PVC interfacial layers(IOP Publishing Ltd., 2024) Badali, Yosef; Güçlü, Çiğdem ŞükriyeThis paper has investigated and compared the impact of polyvinyl chloride (PVC) without/with manganese (Mn) metallic nanoparticles interfacial layer on the electric and impedance characteristics of Schottky diode (SD) with a structure of Au/n-Si (MS). The structures of these two metal-polymer-semiconductor (MPS) SDs are Au/PVC/n-Si and Au/PVC:Mn/n-Si. A detailed description of the SDs manufacturing process is given. The x-ray diffraction (XRD) analysis, Scanning Electron Microscope (FE-SEM) images, and Electron Dispersive x-ray (EDX) spectroscopy are three methods that have been utilized to examine mean size of crystallite, morphology of surface, purity specification. The fundamental electronic variables of these devices are ascertained and contrasted with one another using the I-V characteristic measurement at +/- 6 V. Ohm's law, Thermionic Emission (TE) theory, modified Norde, and Cheung functions are used to calculate the SDs' leakage current (I0), ideality coefficient (n), potential barrier height (BH), shunt (Rsh), and series (Rs) resistances. Investigations are conducted on the energy dependence of surface states density (Nss) and the current conduction mechanisms (CCMs) for both reverse and forward biases. These interfacial layers are known to decrease the n, Rs, and Nss. The PVC polymer interlayer leads to improve the efficiency of the MS-type SD, but it does not when doped by Mn nanoparticles. Additionally, by measuring impedance at a bias of 1.5 V and 100 Hz-1 MHz frequency range, the frequency dependence of dielectric properties of the prepared SDs is studied. The dielectric permittivity, dielectric loss tangent, electronic modulus, and ac electronic conductivity of these SDs are all studied.Öğe Electrical properties of PVC:BN nanocomposite as interfacial layer in metal-semiconductor structure(Springer, 2024) Badali, YosefIn this study, a comprehensive examination is assumed to investigate the influence of interfacial layers composed of polyvinyl chloride (PVC) and polyvinyl chloride-boron nitride (PVC: BN) on the electrical characteristics of the Au/n-Si structure. Two distinct structures, namely Au/PVC/n-Si (MPS1) and Au/PVC: BN/n-Si (MPS2), are fabricated for this purpose. The provided boron nitride (BN) nanostructures are analyzed using X-ray diffraction (XRD) patterns to determine their average crystalline size and surface morphology. Following the structural analysis, current-voltage (I–V) measurements are conducted over an extensive voltage range (± 3 V). Subsequently, the fundamental electrical properties of the developed Schottky structures are determined using various methods and compared. Experimental results indicate that the PVC: BN nanocomposite leads to an increase in the potential barrier height (BH), shunt resistance (Rsh), and rectifying rate (RR = IF/IR), while simultaneously decreasing the ideality factor (n), series resistance (Rs), and surface states density (Nss). It was discovered that the MS structure’s RR was 7 times lower than that of the MPS2 structure. Moreover, the energy-dependent Nss density is also derived using n(V) and ?B0(V) functions. Based on the ln(IR)?VR0.5 profile at the reverse bias region, the Schottky-emission (SE) type conduction mechanism is effective for MS structures, whereas Poole-Frenkel-emission (PFE) is effective for MPS structures.Öğe Enhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayer(IOP Publishing Ltd., 2024) Taşçıoğlu, İlke; Badali, Yosef; Altındal Yerişkin, SeçkinIn this work, Schottky Barrier diodes (SBDs) formed on n-Si substrates were created using polyvinyl-chloride (PVC) and graphite/graphene-oxide (Gt/GO) nanoparticles (NPs) doped PVC interlayers and the conduction mechanisms of the structures were compared to the reference Au/n-Si (MS) diode. The characterization methods, including x-Ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FE-SEM), and Energy Dispersive x-Ray (EDX), were used to analyze Gt/GO NPs and examine their structural, morphological, and analytical properties. In addition to the standard I-V method, modified Norde and Cheung methods were applied to analyze the forward bias I-V characteristics to determine the impact of pure-PVC and (PVC: Gt-GO) interlayers' main electronic parameters on the SBDs. The surface state density (N ss ) depending on energy was also determined from the forward bias current-voltage by considering the voltage-dependent ideality coefficient, n(V), and barrier height (BH), Phi B(V). The outcomes showed that, as compared to MS structures, both the pure-PVC and (PVC: Gt-GO) interlayer leads to a decrease of n, leakage-current, N ss , an increase of rectification ratio (RR), shunt-resistance (R sh ) and zero-bias barrier-height (Phi B0 ). The differences in the electronic parameters observed between the I-V, Norde, and Cheung functions indicate that these parameters are highly reliant on the voltage and the computation method utilized. The barrier inhomogeneities at the metal/semiconductor surface also affect the current-transport or conduction mechanisms.Öğe Frequency dependent electrical and dielectric properties of the Au/(RuO2:PVC)/n-Si (MPS) structures(Elsevier B.V., 2023) Güneşer, Muhammet Tahir; Elamen, Hasan; Badali, Yosef; Altındal, ŞemsettinIn this study, the electrical and dielectric characteristics of the Au/(RuO2:PVC)/n-Si structures were analyzed using the impedance spectroscopy method, including capacitance/conductance (C - G/?) measurements in wide voltage and frequency ranges (±4 V, 5 kHz – 5 MHz) at room temperature. The main electrical parameters such as concentration of donor atoms (ND), diffusion potential (VD), depletion layer thickness (WD), Fermi energy level (EF), barrier height (?B), and maximum electric field (Em) were extracted for each measured frequency. The ?B, WD, and EF values are increasing with increased frequency, while ND and Em exponentially decrease. The surface-states (NSS) were evaluated using the low–high-frequency capacitance technique. Furthermore, the basic dielectric parameters such as tangent-loss (tan ?), electrical conductivity (?ac), real and imaginary parts of ?*, electric-modulus (M*), and complex impedance (Z*) were investigated. The obtained results indicate that the NSS, and RuO2:PVC organic interlayer are more effective on C and G/? measurements.Öğe Frequency-dependent dielectric, electric modulus, and ac conductivity features of Au/n-Si Schottky diodes (SDs) with PVC and (PVC:Graphite/Graphene-Oxide) interlayer(IOP Publishing Ltd., 2024) Altındal Yerişkin, S.; Taşçıoğlu, İlke; Badali, YosefTo determine the interlayer effect on dielectric features and conductivity, Au/n-Si (S-0), Au/PVC/p-Si (S-1), and Au/PVC:Gt-GO/p-Si (S-2) type SDs were grown onto the same n-Si wafer and their admittance measurements performed between 100 Hz and 1 MHz. The observed decrease in C and G/omega values as frequency increases shows that the charges at the interface-states (N-ss) can easily follow ac-signal and supply an excess capacitance and conductance at lower frequencies. Using C and G/omega data at 1.5 V, the dielectric-constant ('), dielectric-loss (''), and loss-tangent (tan delta) were obtained as a function of frequency. To determine the relaxation processes in (PVC:Gt-GO) nanocomposite, complex-dielectric (M' and M'') formalism was also explored in the whole frequency range. The value of ac electrical conductivity (sigma(ac)) remained independent of frequency until 0.1 MHz and then started to increase exponentially which corresponds to dc and ac conductivity. As compared to S1 and S2 with So SD, the conductivity and ' values increase due to the PVC and (PVC:Gt-GO) interlayer. The Ln(sigma(ac))-Ln(omega) plots were also drawn to analyze the conduction process and their slopes were found as 0.09, 0.39, and 0.58 for S-0, S-1, and S-2 SD, respectively. These results show that the interaction and trap levels of the electron-hole pairs at lower frequencies, as well as from the well-localized relaxation mechanism at higher frequencies.Öğe The influence of the physicochemical processes on the electrical response of Al/p-Si structure with etched surface(Springer Science and Business Media Deutschland GmbH, 2024) Badali, Yosef; Azizian-Kalandaragh, YasharIn this paper, the electrochemical etching process is used for surface modifcation of the p-Si wafer, named as porous silicon (PS), in the metal–semiconductor (MS) type Schottky diode (SD) with a structure of Al/p-Si. Five regions of PS wafer with diferent etching rates are selected for comparison of them which are called P2, P3, P4, and P5 (P1 is the reference area without porosity). The morphological, structural, and electrical properties of the PS used in the MS-type SD are investigated using feld-emission scanning electron microscope (FE-SEM) images, energy dispersive X-ray (EDX) analysis, and current–voltage (I–V) characteristics, respectively. The FE-SEM images show a meaningful efect on the porosity. The EDX spectrum demonstrates the importance of the chemical efects in addition to the physical changes in the porosity process of the p-Si wafer. The reverse-saturation current (I0), ideality factor (n), barrier height at zero-bias (?B0), and series/shunt electrical resistances are also computed and compared. Some of these parameters (n, Rs, BH) are determined using diferent methods, namely Thermionic emission (TE), Cheung functions, and modifed Norde, and they exhibit strong agreement with each other. The energy-dependent profles of surface states (Nss) are estimated from the I–V data by considering the voltage dependence of ?B (V) and n(V). All the experimental fndings indicate that the etching process of the p-Si wafer signifcantly infuences the electrical performance of the Al/p-Si Schottky diode by increasing the extent of etching.Öğe Numerical and experimental investigation for enhancing thermal performance of a concentric heat exchanger using different scenarios(Emerald, 2023) Aytaç, İpek; Badali, Yosef; Tuncer, Azim DoğuşPurpose – Heat exchangers (HEs) which provide heat transfer and transfer energy through direct or indirect contact between fluids have an essential role in many processes as a part of various industries from pharmaceutical production to electronic devices. Using nanofluid as working fluid and integrating different types of turbulators could be used to upgrade the thermal effectiveness of HEs. Recently, to obtain more increment in thermal effectiveness, hybrid nanofluids are used that are prepared by mixing two or more various nanoparticles. The purpose of this experimental and numerical study is investigating different scenarios for improving the effectiveness of a concentric U-tube type HE. Design/methodology/approach – In the numerical section of this study, different turbulator modifications, including circular and quarter circular rings, were modeled to determine the effect of adding turbulator on thermal performance. In addition, Al2O3/water and SiO2/water single and Al2O3–SiO2/water hybrid nanofluids were experimentally tested in an unmodified concentric U-tube HE in two different modes, including counter flow and parallel flow. Al2O3–SiO2/water hybrid nanofluid was prepared at 2% (wt./wt.) particle ratio and compared with Al2O3/water and SiO2/water single type nanofluids at same particle ratios and with distilled water. Findings – Numerical modeling findings exhibited that integrating turbulators to the concentric tube type HE caused to raise in the effectiveness by improving heat transfer area. Also, experimental results indicated that using both hybrid and single type nanofluids notably upgraded the thermal performance of the concentric U-tube HE. Integrating turbulators cannot be an effective alternative in a concentric U-tube type HE with lower diameter because of raise in pressure drop. Numerically achieved findings exhibited that using quarter circular turbulators decreased pressure drop in comparison with circular turbulators. According to the experimental outcomes, using hybrid Al2O3– SiO2/water nanofluid leads to obtain more thermal performance in comparison with single type nanofluids. The highest increment in overall heat transfer coefficient of HE by using Al2O3–SiO2/ water nanofluid achieved as 58.97% experimentally. Originality/value – The overall outcomes of the current research exhibited the positive impacts of using hybrid nanofluid and integrating turbulators. In this empirical and numerical survey, numerical simulations were performed to specify the impact of applying different turbulators and hybrid nanofluid on the flow and thermal characteristics in a concentric U-tube HE. The achieved outcomes exhibited that using hybrid nanofluid can notably increase the thermal performance with negligible pressure drop in comparison with two different turbulator modifications.Öğe The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface(Springer Science and Business Media Deutschland GmbH, 2023) Elamen, Hasan; Badali, Yosef; Ulusoy, Murat; Azizian-Kalandaragh, Yashar; Altındal, Şemsettin; Güneşer, Muhammet TahirThe RuO2-doped organic polymer composite structure was used as the interface to study the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical parameters of the structure interlaid with RuO2:PVC were investigated using the I–V characteristics in the dark and under defnite illuminations. The values of saturation current (I0), barrier height (?B0) at zero-bias, ideality factor (n), series and shunt resistances (Rs and Rsh) were calculated by using diferent methods such as thermionic emission, Ohm’s law, Cheung and Norde functions. They were found to be intensely depend on illumination levels and voltage. Forward bias I–V data were used to obtain energy-dependent profles of interface-states (Nss) for each illumination level. Moreover, the open-circuit voltage (Voc), short circuit current (Isc), flling factor (FF), and efciency (?) of the fabricated Schottky structure were found as 0.118 V, 6.4 ?A, 46%, and 0.088% under 50 mW/cm?2, respectively. According to the fndings, the RuO2:PVC organic interlayer is light-sensitive and can thus be used in optoelectronic applications, such as photodetectors and photodiodes.Öğe Plasma-enhanced atomic layer deposition of amorphous Ga2O3 gate dielectrics(Elsevier Ltd, 2022) Badali, Yosef; Arslan, Engin; Ulusoy, Türkan Gamze; Özçelik, Süleyman; Özbay, EkmelAmorphous gallium oxide (Ga2O3) thin films were investigated as gate dielectrics for electronic device applications using plasma-enhanced atomic layer deposition. The structural and morphological properties as well as the electrical and dielectric behaviors of Ga2O3 thin films were explored. The surface morphology of the amorphous Ga2O3 thin film was highly smooth with root mean square of 0.55 nm and low defect density, which were visible to atomic force microscopy. The grazing incidence X-ray diffraction pattern showed no discernible peak, indicating that the film was amorphous. The X-ray photoelectron spectroscopy depth-profiling analysis showed that the Ga/O ratio was 0.76, slightly more than the optimum 2/3 ratio (0.67). The temperature-dependent current–voltage characteristics of the Au/Ni/Ga2O3/p-Si structure revealed that ideality factor and barrier height values decreased and increased with increasing temperature, respectively, demonstrating their high temperature dependency. Regardless of the applied frequency, Ga2O3 thin films exhibited a good dielectric constant of about ?9 at zero bias voltage. The comprehensive capacitance–voltage analysis showed low trap densities of about 1012 eV?1 cm?2 at the Ga2O3–p-Si interface.Öğe A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors(Institute of Electrical and Electronics Engineers Inc., 2024) Çiçek, Osman; Badali, YosefGallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) are regarded as fundamental semiconductor devices for future power electronic applications. Consequently, researchers have directed their efforts toward enhancing critical parameters such as the breakdown voltage (Vbr), cut-off frequency, and operating temperature. Therefore, this review article explores research endeavors concerning the enhancement of Vbr in GaN-based HEMTs. The objective is to gain insights into the key factors influencing Vbr values and to identify the constraints that govern the optimal performance of HEMTs in power devices. Additionally, this review provides an in-depth examination of select studies that introduce novel techniques for improving Vbr values.Öğe The temperature-dependent dielectric properties of the Au/ZnO-PVA/n-Si structure(Elsevier, 2023) Azizian-Kalandaragh, Yashar; Badali, Yosef; Jamshidi-Ghozlu, Mir-Ahmad; Hanife, Ferhat; Özçelik, Süleyman; Altındal, Şemsettin; Pirgholi-Givi, GholamrezaIn this work, the temperature-dependent (80-360 K) dielectric properties of the Au/ZnO-PVA/n-Si structure was investigated employing capacitance-voltage (C-V) and conductance-voltage (G/ro-V) experiments at 1 MHz. The results indicate that all electrical and dielectric variables in these structures are forcefully dependent on tem-perature. Also, using the interlayer ZnO-PVA nanocomposite has caused changes to these parameters. Because of the presence of series resistance, the amount of C and G/ro increases as the temperature rises. The values of EF increase with temperature, whereas the values of barrier height decrease from 1.045 eV to 0.943 eV, and the value of alpha extract from phi B-T plot is obtained-3.5 x 10-4 eV/K that is approximately equal to the silicon temperature coefficient. The value of activation energy is obtained 0.04 eV which is a modest amount obtained from the conduction procedure's contribution to the boundary grains.Öğe Thermal dependence on electrical characteristics of Au/(PVC:Sm2O3)/n-Si structure(Springer, 2024) Badali, Yosef; Altan, Hayati; Altındal, ŞemsettinIn this study, we investigated the current–voltage (I–V) characteristics of Au/nSi structure with an interfacial layer of Samarium Oxide (Sm2O3) nanoparticles (NPs) in polyvinyl chloride (PVC) matrix within a temperature range of 80–320 K. Applying the thermionic emission (TE) theory, essential electrical parameters such as reverse saturation current (I0), ideality factor (n), zero bias barrier height (?B0), series resistance (Rs), and rectifcation rate (RR) were carefully derived from the I–V data. The mean values of BH and Richardson constant obtained from the modifed Richardson plot were determined to be 0.730 eV and 111.4 A/(cmK)2 , respectively. Remarkably, this A* value closely matches its theoretical counterpart for n-type Si. Thus, our fndings successfully highlight the efectiveness of the thermionic emission (TE) mechanism with the Gaussian distribution of BHs in explaining the I-V-T characteristics of the fabricated Schotky structure, shedding light on the intricate interplay between temperature and diode behavior. These insights ofer valuable guidance for designing and optimizing thermal-sensitive devices based on this innovative structure.Öğe Vertical cdte:pvp/p-si-based temperature sensor by using aluminum anode schottky contact(IEEE, 2022) Cetinkaya, Hayriye Gokcen; Cicek, Osman; Altindal, Semsettin; Badali, Yosef; Demirezen, SelcukThe vertical Schottky barrier diode (SBD)-based temperature sensors with the drive modes are a significant issue with more advantageous than the on-chip sensor. The sensitivity (S) and the current conduction mechanisms (CCMs) of the vertical cadmium telluride (CdTe):polyvinyl pyrolidone (PVP)/p-Si SBD were studied experimentally over the range of 80–340 K and compared with that of the lateral and vertical sensors. It is shown that the low and moderated voltages of the CdTe:PVP/p-Si corresponding two linear regions of the current–voltage (I–V) outputs are around 0.1–0.3 and 0.4–0.65 V, respectively. The variation of Schottky barrier height (BH; Bo) and ideality factor (n) with temperature was obtained according to two linear regions. Energy dispersion of the interface traps (Nss) with changing temperature is additionally analyzed quantitatively. It is concluded that the thermionic-emission (TE) theory with double-Gaussian distribution (GD) is the dominant mechanism resulting the I–V characteristics of the vertical CdTe:PVP/p-Si SBD in this study. Moreover, in the constant current, the S values at the drive current of 10, 20, and 50 ?A were resulting in a range of ?1.6 to ?1.8 mV/K.
