The temperature-dependent dielectric properties of the Au/ZnO-PVA/n-Si structure
Küçük Resim Yok
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this work, the temperature-dependent (80-360 K) dielectric properties of the Au/ZnO-PVA/n-Si structure was investigated employing capacitance-voltage (C-V) and conductance-voltage (G/ro-V) experiments at 1 MHz. The results indicate that all electrical and dielectric variables in these structures are forcefully dependent on tem-perature. Also, using the interlayer ZnO-PVA nanocomposite has caused changes to these parameters. Because of the presence of series resistance, the amount of C and G/ro increases as the temperature rises. The values of EF increase with temperature, whereas the values of barrier height decrease from 1.045 eV to 0.943 eV, and the value of alpha extract from phi B-T plot is obtained-3.5 x 10-4 eV/K that is approximately equal to the silicon temperature coefficient. The value of activation energy is obtained 0.04 eV which is a modest amount obtained from the conduction procedure's contribution to the boundary grains.
Açıklama
Anahtar Kelimeler
ZnO-PVA nanocomposite, Dielectric properties, Capacitance -voltage, Temperature dependence
Kaynak
Physica B-Condensed Matter
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
650
