The influence of the physicochemical processes on the electrical response of Al/p-Si structure with etched surface

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dc.contributor.authorBadali, Yosef
dc.contributor.authorAzizian-Kalandaragh, Yashar
dc.date.accessioned2024-04-01T11:44:36Z
dc.date.available2024-04-01T11:44:36Z
dc.date.issued2024en_US
dc.departmentFakülteler, Mühendislik Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.description.abstractIn this paper, the electrochemical etching process is used for surface modifcation of the p-Si wafer, named as porous silicon (PS), in the metal–semiconductor (MS) type Schottky diode (SD) with a structure of Al/p-Si. Five regions of PS wafer with diferent etching rates are selected for comparison of them which are called P2, P3, P4, and P5 (P1 is the reference area without porosity). The morphological, structural, and electrical properties of the PS used in the MS-type SD are investigated using feld-emission scanning electron microscope (FE-SEM) images, energy dispersive X-ray (EDX) analysis, and current–voltage (I–V) characteristics, respectively. The FE-SEM images show a meaningful efect on the porosity. The EDX spectrum demonstrates the importance of the chemical efects in addition to the physical changes in the porosity process of the p-Si wafer. The reverse-saturation current (I0), ideality factor (n), barrier height at zero-bias (?B0), and series/shunt electrical resistances are also computed and compared. Some of these parameters (n, Rs, BH) are determined using diferent methods, namely Thermionic emission (TE), Cheung functions, and modifed Norde, and they exhibit strong agreement with each other. The energy-dependent profles of surface states (Nss) are estimated from the I–V data by considering the voltage dependence of ?B (V) and n(V). All the experimental fndings indicate that the etching process of the p-Si wafer signifcantly infuences the electrical performance of the Al/p-Si Schottky diode by increasing the extent of etching.en_US
dc.identifier.doi10.1007/s00339-024-07393-yen_US
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-85188437647en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://hdl.handle.net/11467/7216
dc.identifier.urihttps://doi.org/10.1007/s00339-024-07393-y
dc.identifier.volume130en_US
dc.identifier.wosWOS:001189374700001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringer Science and Business Media Deutschland GmbHen_US
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectShottky diode (SD); Porous silicon surface; Electric properties; Energy dependent profle of surface statesen_US
dc.titleThe influence of the physicochemical processes on the electrical response of Al/p-Si structure with etched surfaceen_US
dc.typeArticleen_US

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