Plasma-enhanced atomic layer deposition of amorphous Ga2O3 gate dielectrics

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dc.contributor.authorBadali, Yosef
dc.contributor.authorArslan, Engin
dc.contributor.authorUlusoy, Türkan Gamze
dc.contributor.authorÖzçelik, Süleyman
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2023-01-20T11:30:44Z
dc.date.available2023-01-20T11:30:44Z
dc.date.issued2022en_US
dc.departmentFakülteler, Mühendislik Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.description.abstractAmorphous gallium oxide (Ga2O3) thin films were investigated as gate dielectrics for electronic device applications using plasma-enhanced atomic layer deposition. The structural and morphological properties as well as the electrical and dielectric behaviors of Ga2O3 thin films were explored. The surface morphology of the amorphous Ga2O3 thin film was highly smooth with root mean square of 0.55 nm and low defect density, which were visible to atomic force microscopy. The grazing incidence X-ray diffraction pattern showed no discernible peak, indicating that the film was amorphous. The X-ray photoelectron spectroscopy depth-profiling analysis showed that the Ga/O ratio was 0.76, slightly more than the optimum 2/3 ratio (0.67). The temperature-dependent current–voltage characteristics of the Au/Ni/Ga2O3/p-Si structure revealed that ideality factor and barrier height values decreased and increased with increasing temperature, respectively, demonstrating their high temperature dependency. Regardless of the applied frequency, Ga2O3 thin films exhibited a good dielectric constant of about ?9 at zero bias voltage. The comprehensive capacitance–voltage analysis showed low trap densities of about 1012 eV?1 cm?2 at the Ga2O3–p-Si interface.en_US
dc.identifier.doi10.1016/j.jpcs.2022.110976en_US
dc.identifier.scopus2-s2.0-85137016929en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://hdl.handle.net/11467/6119
dc.identifier.urihttps://doi.org/10.1016/j.jpcs.2022.110976
dc.identifier.volume170en_US
dc.identifier.wosWOS:000863234000002en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Ltden_US
dc.relation.ispartofJournal of Physics and Chemistry of Solidsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.subjectAmorphous Ga2O3; Atomic layer deposition; Dielectric properties; Interface trapsen_US
dc.titlePlasma-enhanced atomic layer deposition of amorphous Ga2O3 gate dielectricsen_US
dc.typeArticleen_US

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