Enhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayer

Basit Öğe Kaydı
dc.authorid0000-0001-9563-4396en_US
dc.authorid0000-0001-7723-4188en_US
dc.authorid0000-0002-9772-1212en_US
dc.contributor.authorTaşçıoğlu, İlke
dc.contributor.authorBadali, Yosef
dc.contributor.authorAltındal Yerişkin, Seçkin
dc.date.accessioned2024-07-23T11:55:00Z
dc.date.available2024-07-23T11:55:00Z
dc.date.issued2024en_US
dc.departmentFakülteler, Mühendislik Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.description.abstractIn this work, Schottky Barrier diodes (SBDs) formed on n-Si substrates were created using polyvinyl-chloride (PVC) and graphite/graphene-oxide (Gt/GO) nanoparticles (NPs) doped PVC interlayers and the conduction mechanisms of the structures were compared to the reference Au/n-Si (MS) diode. The characterization methods, including x-Ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FE-SEM), and Energy Dispersive x-Ray (EDX), were used to analyze Gt/GO NPs and examine their structural, morphological, and analytical properties. In addition to the standard I-V method, modified Norde and Cheung methods were applied to analyze the forward bias I-V characteristics to determine the impact of pure-PVC and (PVC: Gt-GO) interlayers' main electronic parameters on the SBDs. The surface state density (N ss ) depending on energy was also determined from the forward bias current-voltage by considering the voltage-dependent ideality coefficient, n(V), and barrier height (BH), Phi B(V). The outcomes showed that, as compared to MS structures, both the pure-PVC and (PVC: Gt-GO) interlayer leads to a decrease of n, leakage-current, N ss , an increase of rectification ratio (RR), shunt-resistance (R sh ) and zero-bias barrier-height (Phi B0 ). The differences in the electronic parameters observed between the I-V, Norde, and Cheung functions indicate that these parameters are highly reliant on the voltage and the computation method utilized. The barrier inhomogeneities at the metal/semiconductor surface also affect the current-transport or conduction mechanisms.en_US
dc.identifier.doi10.1088/1402-4896/ad5b9cen_US
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-85198905923en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://hdl.handle.net/11467/7370
dc.identifier.urihttps://doi.org/10.1088/1402-4896/ad5b9c
dc.identifier.volume99en_US
dc.identifier.wosWOS:001267496600001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIOP Publishing Ltd.en_US
dc.relation.ispartofPhysica Scriptaen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_US
dc.subjectorganic-based interlayer; graphite/graphene-oxide nanoparticles; electronic parameters and conduction mechanisms; surface states and series resistanceen_US
dc.titleEnhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayeren_US
dc.typeArticleen_US

Dosyalar

Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.56 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu