Frequency-dependent dielectric, electric modulus, and ac conductivity features of Au/n-Si Schottky diodes (SDs) with PVC and (PVC:Graphite/Graphene-Oxide) interlayer

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dc.authorid0000-0001-9563-4396en_US
dc.authorid0000-0001-7723-4188en_US
dc.contributor.authorAltındal Yerişkin, S.
dc.contributor.authorTaşçıoğlu, İlke
dc.contributor.authorBadali, Yosef
dc.date.accessioned2024-05-29T08:36:20Z
dc.date.available2024-05-29T08:36:20Z
dc.date.issued2024en_US
dc.departmentFakülteler, Mühendislik Fakültesi, Bilgisayar Mühendisliği Bölümüen_US
dc.description.abstractTo determine the interlayer effect on dielectric features and conductivity, Au/n-Si (S-0), Au/PVC/p-Si (S-1), and Au/PVC:Gt-GO/p-Si (S-2) type SDs were grown onto the same n-Si wafer and their admittance measurements performed between 100 Hz and 1 MHz. The observed decrease in C and G/omega values as frequency increases shows that the charges at the interface-states (N-ss) can easily follow ac-signal and supply an excess capacitance and conductance at lower frequencies. Using C and G/omega data at 1.5 V, the dielectric-constant ('), dielectric-loss (''), and loss-tangent (tan delta) were obtained as a function of frequency. To determine the relaxation processes in (PVC:Gt-GO) nanocomposite, complex-dielectric (M' and M'') formalism was also explored in the whole frequency range. The value of ac electrical conductivity (sigma(ac)) remained independent of frequency until 0.1 MHz and then started to increase exponentially which corresponds to dc and ac conductivity. As compared to S1 and S2 with So SD, the conductivity and ' values increase due to the PVC and (PVC:Gt-GO) interlayer. The Ln(sigma(ac))-Ln(omega) plots were also drawn to analyze the conduction process and their slopes were found as 0.09, 0.39, and 0.58 for S-0, S-1, and S-2 SD, respectively. These results show that the interaction and trap levels of the electron-hole pairs at lower frequencies, as well as from the well-localized relaxation mechanism at higher frequencies.en_US
dc.identifier.doi10.1088/1361-6463/ad4564en_US
dc.identifier.issue31en_US
dc.identifier.scopus2-s2.0-85192979154en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://hdl.handle.net/11467/7290
dc.identifier.urihttps://doi.org/10.1088/1361-6463/ad4564
dc.identifier.volume57en_US
dc.identifier.wosWOS:001220223800001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIOP Publishing Ltd.en_US
dc.relation.ispartofJournal of Physics D: Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_US
dc.subjectSchottky diodes (SDs); PVC and (PVC:Gt-GO) interlayers; frequency dependent dielectric and electric modulus features; relaxation phoneme and conductivityen_US
dc.titleFrequency-dependent dielectric, electric modulus, and ac conductivity features of Au/n-Si Schottky diodes (SDs) with PVC and (PVC:Graphite/Graphene-Oxide) interlayeren_US
dc.typeArticleen_US

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