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Öğe The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface(Elsevier Science Sa, 2023) Ulusoy, Murat; Badali, Yosef; Pirgholi-Givi, Gholamreza; Azizian-Kalandaragh, Yashar; Altindal, SemsettinThe electrical behaviors of the Schottky structures with a ruthenium dioxide (RuO2) doped-polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to 5 MHz) and voltages. The interface was obtained by dispersing RuO2 nanopowder as colloidal particles into the PVC organic polymer using the ultrasonic irradiation method. The capacitance/conductance and surface state intensity (Nss) effects of this interface on the structure have been widely discussed. Remarkable increases in capacitance (C) and conductance (G/.) values were found, especially in the depletion zone. The series resistance of the structure (Rs) value decreases strongly with increasing frequency for + 3.5 V, down to a value of approximately 48.43 O at 5 MHz. Furthermore, the effect of the Rs is seen in the Cc and Gc/. curves in the weak and strong accumulation regions. While the maximum value of the Nss is 1.42 x 10(13) eV 1.cm(-2) at 0.478 eV, its minimum value is 1.23 x 1013 eV 1.cm (-) at 0.540 eV. The relaxation time (t) values change from 2.40 x 10(-5) to 2.03 x 10(-4) s in exponentially increasing values. It can be stated that there is an inverse relationship between the t and distribution of the Nss values. These distributions vary depending on the applied voltage and frequency.Öğe The influence of the physicochemical processes on the electrical response of Al/p-Si structure with etched surface(Springer Science and Business Media Deutschland GmbH, 2024) Badali, Yosef; Azizian-Kalandaragh, YasharIn this paper, the electrochemical etching process is used for surface modifcation of the p-Si wafer, named as porous silicon (PS), in the metal–semiconductor (MS) type Schottky diode (SD) with a structure of Al/p-Si. Five regions of PS wafer with diferent etching rates are selected for comparison of them which are called P2, P3, P4, and P5 (P1 is the reference area without porosity). The morphological, structural, and electrical properties of the PS used in the MS-type SD are investigated using feld-emission scanning electron microscope (FE-SEM) images, energy dispersive X-ray (EDX) analysis, and current–voltage (I–V) characteristics, respectively. The FE-SEM images show a meaningful efect on the porosity. The EDX spectrum demonstrates the importance of the chemical efects in addition to the physical changes in the porosity process of the p-Si wafer. The reverse-saturation current (I0), ideality factor (n), barrier height at zero-bias (?B0), and series/shunt electrical resistances are also computed and compared. Some of these parameters (n, Rs, BH) are determined using diferent methods, namely Thermionic emission (TE), Cheung functions, and modifed Norde, and they exhibit strong agreement with each other. The energy-dependent profles of surface states (Nss) are estimated from the I–V data by considering the voltage dependence of ?B (V) and n(V). All the experimental fndings indicate that the etching process of the p-Si wafer signifcantly infuences the electrical performance of the Al/p-Si Schottky diode by increasing the extent of etching.Öğe The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface(Springer Science and Business Media Deutschland GmbH, 2023) Elamen, Hasan; Badali, Yosef; Ulusoy, Murat; Azizian-Kalandaragh, Yashar; Altındal, Şemsettin; Güneşer, Muhammet TahirThe RuO2-doped organic polymer composite structure was used as the interface to study the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical parameters of the structure interlaid with RuO2:PVC were investigated using the I–V characteristics in the dark and under defnite illuminations. The values of saturation current (I0), barrier height (?B0) at zero-bias, ideality factor (n), series and shunt resistances (Rs and Rsh) were calculated by using diferent methods such as thermionic emission, Ohm’s law, Cheung and Norde functions. They were found to be intensely depend on illumination levels and voltage. Forward bias I–V data were used to obtain energy-dependent profles of interface-states (Nss) for each illumination level. Moreover, the open-circuit voltage (Voc), short circuit current (Isc), flling factor (FF), and efciency (?) of the fabricated Schottky structure were found as 0.118 V, 6.4 ?A, 46%, and 0.088% under 50 mW/cm?2, respectively. According to the fndings, the RuO2:PVC organic interlayer is light-sensitive and can thus be used in optoelectronic applications, such as photodetectors and photodiodes.Öğe The temperature-dependent dielectric properties of the Au/ZnO-PVA/n-Si structure(Elsevier, 2023) Azizian-Kalandaragh, Yashar; Badali, Yosef; Jamshidi-Ghozlu, Mir-Ahmad; Hanife, Ferhat; Ozcelik, Suleyman; Altindal, Semsettin; Pirgholi-Givi, GholamrezaIn this work, the temperature-dependent (80-360 K) dielectric properties of the Au/ZnO-PVA/n-Si structure was investigated employing capacitance-voltage (C-V) and conductance-voltage (G/ro-V) experiments at 1 MHz. The results indicate that all electrical and dielectric variables in these structures are forcefully dependent on tem-perature. Also, using the interlayer ZnO-PVA nanocomposite has caused changes to these parameters. Because of the presence of series resistance, the amount of C and G/ro increases as the temperature rises. The values of EF increase with temperature, whereas the values of barrier height decrease from 1.045 eV to 0.943 eV, and the value of alpha extract from phi B-T plot is obtained-3.5 x 10-4 eV/K that is approximately equal to the silicon temperature coefficient. The value of activation energy is obtained 0.04 eV which is a modest amount obtained from the conduction procedure's contribution to the boundary grains.
