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    21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode
    (IEEE, 2022) Cicek, Osman; Arslan, Engin; Altindal, Semsettin; Badali, Yosef; Ozbay, Ekmel
    Sensitivity (S) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm)- Au(100 nm)/Ga2O3/p-Si vertical MOS type diode, using the measured capacitance–voltage (Cm–V) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.
  • Küçük Resim
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    Plasma-enhanced atomic layer deposition of amorphous Ga2O3 gate dielectrics
    (Elsevier Ltd, 2022) Badali, Yosef; Arslan, Engin; Ulusoy, Türkan Gamze; Özçelik, Süleyman; Özbay, Ekmel
    Amorphous gallium oxide (Ga2O3) thin films were investigated as gate dielectrics for electronic device applications using plasma-enhanced atomic layer deposition. The structural and morphological properties as well as the electrical and dielectric behaviors of Ga2O3 thin films were explored. The surface morphology of the amorphous Ga2O3 thin film was highly smooth with root mean square of 0.55 nm and low defect density, which were visible to atomic force microscopy. The grazing incidence X-ray diffraction pattern showed no discernible peak, indicating that the film was amorphous. The X-ray photoelectron spectroscopy depth-profiling analysis showed that the Ga/O ratio was 0.76, slightly more than the optimum 2/3 ratio (0.67). The temperature-dependent current–voltage characteristics of the Au/Ni/Ga2O3/p-Si structure revealed that ideality factor and barrier height values decreased and increased with increasing temperature, respectively, demonstrating their high temperature dependency. Regardless of the applied frequency, Ga2O3 thin films exhibited a good dielectric constant of about ?9 at zero bias voltage. The comprehensive capacitance–voltage analysis showed low trap densities of about 1012 eV?1 cm?2 at the Ga2O3–p-Si interface.