Yazar "Altindal, Semsettin" seçeneğine göre listele

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    21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode
    (IEEE, 2022) Cicek, Osman; Arslan, Engin; Altindal, Semsettin; Badali, Yosef; Ozbay, Ekmel
    Sensitivity (S) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm)- Au(100 nm)/Ga2O3/p-Si vertical MOS type diode, using the measured capacitance–voltage (Cm–V) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.
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    The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface
    (Elsevier Science Sa, 2023) Ulusoy, Murat; Badali, Yosef; Pirgholi-Givi, Gholamreza; Azizian-Kalandaragh, Yashar; Altindal, Semsettin
    The electrical behaviors of the Schottky structures with a ruthenium dioxide (RuO2) doped-polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to 5 MHz) and voltages. The interface was obtained by dispersing RuO2 nanopowder as colloidal particles into the PVC organic polymer using the ultrasonic irradiation method. The capacitance/conductance and surface state intensity (Nss) effects of this interface on the structure have been widely discussed. Remarkable increases in capacitance (C) and conductance (G/.) values were found, especially in the depletion zone. The series resistance of the structure (Rs) value decreases strongly with increasing frequency for + 3.5 V, down to a value of approximately 48.43 O at 5 MHz. Furthermore, the effect of the Rs is seen in the Cc and Gc/. curves in the weak and strong accumulation regions. While the maximum value of the Nss is 1.42 x 10(13) eV 1.cm(-2) at 0.478 eV, its minimum value is 1.23 x 1013 eV 1.cm (-) at 0.540 eV. The relaxation time (t) values change from 2.40 x 10(-5) to 2.03 x 10(-4) s in exponentially increasing values. It can be stated that there is an inverse relationship between the t and distribution of the Nss values. These distributions vary depending on the applied voltage and frequency.
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    The temperature-dependent dielectric properties of the Au/ZnO-PVA/n-Si structure
    (Elsevier, 2023) Azizian-Kalandaragh, Yashar; Badali, Yosef; Jamshidi-Ghozlu, Mir-Ahmad; Hanife, Ferhat; Ozcelik, Suleyman; Altindal, Semsettin; Pirgholi-Givi, Gholamreza
    In this work, the temperature-dependent (80-360 K) dielectric properties of the Au/ZnO-PVA/n-Si structure was investigated employing capacitance-voltage (C-V) and conductance-voltage (G/ro-V) experiments at 1 MHz. The results indicate that all electrical and dielectric variables in these structures are forcefully dependent on tem-perature. Also, using the interlayer ZnO-PVA nanocomposite has caused changes to these parameters. Because of the presence of series resistance, the amount of C and G/ro increases as the temperature rises. The values of EF increase with temperature, whereas the values of barrier height decrease from 1.045 eV to 0.943 eV, and the value of alpha extract from phi B-T plot is obtained-3.5 x 10-4 eV/K that is approximately equal to the silicon temperature coefficient. The value of activation energy is obtained 0.04 eV which is a modest amount obtained from the conduction procedure's contribution to the boundary grains.
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    Vertical cdte:pvp/p-si-based temperature sensor by using aluminum anode schottky contact
    (IEEE, 2022) Cetinkaya, Hayriye Gokcen; Cicek, Osman; Altindal, Semsettin; Badali, Yosef; Demirezen, Selcuk
    The vertical Schottky barrier diode (SBD)-based temperature sensors with the drive modes are a significant issue with more advantageous than the on-chip sensor. The sensitivity (S) and the current conduction mechanisms (CCMs) of the vertical cadmium telluride (CdTe):polyvinyl pyrolidone (PVP)/p-Si SBD were studied experimentally over the range of 80–340 K and compared with that of the lateral and vertical sensors. It is shown that the low and moderated voltages of the CdTe:PVP/p-Si corresponding two linear regions of the current–voltage (I–V) outputs are around 0.1–0.3 and 0.4–0.65 V, respectively. The variation of Schottky barrier height (BH; Bo) and ideality factor (n) with temperature was obtained according to two linear regions. Energy dispersion of the interface traps (Nss) with changing temperature is additionally analyzed quantitatively. It is concluded that the thermionic-emission (TE) theory with double-Gaussian distribution (GD) is the dominant mechanism resulting the I–V characteristics of the vertical CdTe:PVP/p-Si SBD in this study. Moreover, in the constant current, the S values at the drive current of 10, 20, and 50 ?A were resulting in a range of ?1.6 to ?1.8 mV/K.