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    The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface
    (Elsevier Science Sa, 2023) Ulusoy, Murat; Badali, Yosef; Pirgholi-Givi, Gholamreza; Azizian-Kalandaragh, Yashar; Altindal, Semsettin
    The electrical behaviors of the Schottky structures with a ruthenium dioxide (RuO2) doped-polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to 5 MHz) and voltages. The interface was obtained by dispersing RuO2 nanopowder as colloidal particles into the PVC organic polymer using the ultrasonic irradiation method. The capacitance/conductance and surface state intensity (Nss) effects of this interface on the structure have been widely discussed. Remarkable increases in capacitance (C) and conductance (G/.) values were found, especially in the depletion zone. The series resistance of the structure (Rs) value decreases strongly with increasing frequency for + 3.5 V, down to a value of approximately 48.43 O at 5 MHz. Furthermore, the effect of the Rs is seen in the Cc and Gc/. curves in the weak and strong accumulation regions. While the maximum value of the Nss is 1.42 x 10(13) eV 1.cm(-2) at 0.478 eV, its minimum value is 1.23 x 1013 eV 1.cm (-) at 0.540 eV. The relaxation time (t) values change from 2.40 x 10(-5) to 2.03 x 10(-4) s in exponentially increasing values. It can be stated that there is an inverse relationship between the t and distribution of the Nss values. These distributions vary depending on the applied voltage and frequency.
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    The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface
    (Springer Science and Business Media Deutschland GmbH, 2023) Elamen, Hasan; Badali, Yosef; Ulusoy, Murat; Azizian-Kalandaragh, Yashar; Altındal, Şemsettin; Güneşer, Muhammet Tahir
    The RuO2-doped organic polymer composite structure was used as the interface to study the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical parameters of the structure interlaid with RuO2:PVC were investigated using the I–V characteristics in the dark and under defnite illuminations. The values of saturation current (I0), barrier height (?B0) at zero-bias, ideality factor (n), series and shunt resistances (Rs and Rsh) were calculated by using diferent methods such as thermionic emission, Ohm’s law, Cheung and Norde functions. They were found to be intensely depend on illumination levels and voltage. Forward bias I–V data were used to obtain energy-dependent profles of interface-states (Nss) for each illumination level. Moreover, the open-circuit voltage (Voc), short circuit current (Isc), flling factor (FF), and efciency (?) of the fabricated Schottky structure were found as 0.118 V, 6.4 ?A, 46%, and 0.088% under 50 mW/cm?2, respectively. According to the fndings, the RuO2:PVC organic interlayer is light-sensitive and can thus be used in optoelectronic applications, such as photodetectors and photodiodes.