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  • Küçük Resim
    Öğe
    Frequency dependent electrical and dielectric properties of the Au/(RuO2:PVC)/n-Si (MPS) structures
    (Elsevier B.V., 2023) Güneşer, Muhammet Tahir; Elamen, Hasan; Badali, Yosef; Altındal, Şemsettin
    In this study, the electrical and dielectric characteristics of the Au/(RuO2:PVC)/n-Si structures were analyzed using the impedance spectroscopy method, including capacitance/conductance (C - G/?) measurements in wide voltage and frequency ranges (±4 V, 5 kHz – 5 MHz) at room temperature. The main electrical parameters such as concentration of donor atoms (ND), diffusion potential (VD), depletion layer thickness (WD), Fermi energy level (EF), barrier height (?B), and maximum electric field (Em) were extracted for each measured frequency. The ?B, WD, and EF values are increasing with increased frequency, while ND and Em exponentially decrease. The surface-states (NSS) were evaluated using the low–high-frequency capacitance technique. Furthermore, the basic dielectric parameters such as tangent-loss (tan ?), electrical conductivity (?ac), real and imaginary parts of ?*, electric-modulus (M*), and complex impedance (Z*) were investigated. The obtained results indicate that the NSS, and RuO2:PVC organic interlayer are more effective on C and G/? measurements.
  • Küçük Resim
    Öğe
    The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface
    (Springer Science and Business Media Deutschland GmbH, 2023) Elamen, Hasan; Badali, Yosef; Ulusoy, Murat; Azizian-Kalandaragh, Yashar; Altındal, Şemsettin; Güneşer, Muhammet Tahir
    The RuO2-doped organic polymer composite structure was used as the interface to study the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical parameters of the structure interlaid with RuO2:PVC were investigated using the I–V characteristics in the dark and under defnite illuminations. The values of saturation current (I0), barrier height (?B0) at zero-bias, ideality factor (n), series and shunt resistances (Rs and Rsh) were calculated by using diferent methods such as thermionic emission, Ohm’s law, Cheung and Norde functions. They were found to be intensely depend on illumination levels and voltage. Forward bias I–V data were used to obtain energy-dependent profles of interface-states (Nss) for each illumination level. Moreover, the open-circuit voltage (Voc), short circuit current (Isc), flling factor (FF), and efciency (?) of the fabricated Schottky structure were found as 0.118 V, 6.4 ?A, 46%, and 0.088% under 50 mW/cm?2, respectively. According to the fndings, the RuO2:PVC organic interlayer is light-sensitive and can thus be used in optoelectronic applications, such as photodetectors and photodiodes.