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    Thermal dependence on electrical characteristics of Au/(PVC:Sm2O3)/n-Si structure
    (Springer, 2024) Badali, Yosef; Altan, Hayati; Altındal, Şemsettin
    In this study, we investigated the current–voltage (I–V) characteristics of Au/nSi structure with an interfacial layer of Samarium Oxide (Sm2O3) nanoparticles (NPs) in polyvinyl chloride (PVC) matrix within a temperature range of 80–320 K. Applying the thermionic emission (TE) theory, essential electrical parameters such as reverse saturation current (I0), ideality factor (n), zero bias barrier height (?B0), series resistance (Rs), and rectifcation rate (RR) were carefully derived from the I–V data. The mean values of BH and Richardson constant obtained from the modifed Richardson plot were determined to be 0.730 eV and 111.4 A/(cmK)2 , respectively. Remarkably, this A* value closely matches its theoretical counterpart for n-type Si. Thus, our fndings successfully highlight the efectiveness of the thermionic emission (TE) mechanism with the Gaussian distribution of BHs in explaining the I-V-T characteristics of the fabricated Schotky structure, shedding light on the intricate interplay between temperature and diode behavior. These insights ofer valuable guidance for designing and optimizing thermal-sensitive devices based on this innovative structure.