Elamen, HasanBadali, YosefUlusoy, MuratAzizian-Kalandaragh, YasharAltındal, ŞemsettinGüneşer, Muhammet Tahir2023-05-052023-05-052023https://hdl.handle.net/11467/6594https://doi.org/10.1007/s00289-023-04725-5The RuO2-doped organic polymer composite structure was used as the interface to study the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical parameters of the structure interlaid with RuO2:PVC were investigated using the I–V characteristics in the dark and under defnite illuminations. The values of saturation current (I0), barrier height (?B0) at zero-bias, ideality factor (n), series and shunt resistances (Rs and Rsh) were calculated by using diferent methods such as thermionic emission, Ohm’s law, Cheung and Norde functions. They were found to be intensely depend on illumination levels and voltage. Forward bias I–V data were used to obtain energy-dependent profles of interface-states (Nss) for each illumination level. Moreover, the open-circuit voltage (Voc), short circuit current (Isc), flling factor (FF), and efciency (?) of the fabricated Schottky structure were found as 0.118 V, 6.4 ?A, 46%, and 0.088% under 50 mW/cm?2, respectively. According to the fndings, the RuO2:PVC organic interlayer is light-sensitive and can thus be used in optoelectronic applications, such as photodetectors and photodiodes.eninfo:eu-repo/semantics/embargoedAccessRuO2 · PVC · Schottky structure · Photoresponse · Interface statesArticleQ2WOS:000937957000002N/A2-s2.0-8514811209210.1007/s00289-023-04725-5