21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive Mode

Cicek, OsmanArslan, EnginAltindal, SemsettinBadali, YosefOzbay, Ekmel2023-01-232023-01-232022https://hdl.handle.net/11467/6153https://doi.org/10.1109/JSEN.2022.3219553Sensitivity (S) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm)- Au(100 nm)/Ga2O3/p-Si vertical MOS type diode, using the measured capacitance–voltage (Cm–V) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.eninfo:eu-repo/semantics/embargoedAccessNovel drive mode, sensitivity, temperature sensing, vertical metal-oxide-semiconductor (MOS) type diode.21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics with a Novel Drive ModeArticleQ1WOS:000928140300009N/A2-s2.0-8514158092810.1109/JSEN.2022.3219553